(China (Mainland))
Product Summary
The 2N3553 is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case. The 2N3553 is intended for use in VHF and UHF transmitting applications.
Parametrics
2N3553 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 65 V; (2)VCEX, collector-emitter voltage: 65 V; (3)VCEO, collector-emitter voltage: 40 V; (4)VEBO, emitter-base voltage open collector: 4V; (5)IC, collector current (DC): 0.35 A; (6)ICM, peak collector current: 1A; (7)Ptot, total power dissipation: 7W; (8)Tstg, storage temperature: -65 to +200℃; (9)Tj, junction temperature: 200℃.
Features
2N3553 features: (1)VCEX, collector-emitter voltage: 65 V; (2)VCEO, collector-emitter voltage: 40 V; (3)ICM, peak collector current: 1.0 A; (4)Ptot, total power dissipation: 7.0 W; (5)Tj, junction temperature: 200℃; (6)fT, transition frequency: 500.
Diagrams
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 2N3553 |
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Data Sheet |
Negotiable |
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2N3553(ASI) |
Other |
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Data Sheet |
Negotiable |
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