(China (Mainland))
Product Summary
The 2N3766 is an NPN power silicon transistor.
Parametrics
2N3766 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 60 Vdc; (2)Collector-Base Voltage, VCBO: 80 Vdc; (3)Emitter-Base Voltage, VEBO: 6.0 Vdc; (4)Base Current, IB: 2.0Adc; (5)Collector Current, IC: 4.0 Adc; (6)Total Power Dissipation@ TC = +250℃, PT: 25 W; (7)Operating & Storage Temperature Range, Top, Tstg: -65 to +200℃.
Features
2N3766 features: (1)Collector-Emitter Breakdown Voltage, V(BR)CEO: 60 Vdc; (2)Collector-Emitter Cutoff Current, ICEO: 500mAdc; (3)Collector-Emitter Cutoff Current, ICEX: 10 mAdc; (4)Collector-Base Cutoff Current, ICBO: 10 mAdc; (5)Emitter-Base Cutoff Current, IEBO: 500 mAdc.
Diagrams
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 2N3766 |
Other |
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Data Sheet |
Negotiable |
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2N3700 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
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2N3700DCSM |
Other |
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Data Sheet |
Negotiable |
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2N3700S |
Other |
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Data Sheet |
Negotiable |
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2N3701 |
Other |
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Data Sheet |
Negotiable |
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2N3702 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP -25V -500mA BULK HFE/300 |
Data Sheet |
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2N3702_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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