(China (Mainland))
Product Summary
The 2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applicaitons. It is suitable for 4 to 5 watts output power amplifiers in VHF band applications.
Parametrics
2SC1971 absolute maximum ratings: (1)VCBO, collector to base voltage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 2A; (5)PC, collector dissipation: 1.5W; (6)Tj, junction temperature: 150℃; (7)Tstg, storage temperature: -55 to 150℃.
Features
2SC1971 features: (1)high power gain: Gpe≥10dB; (2)emitter ballasted construction, gold metallization for high reliability and good performances; (3)TO-220 package similar is combinient for mounting; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=6W, f=175MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SC1971 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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