(China (Mainland))
Product Summary
The 2SC2178 is a silicon NPN epitaxial planar type transistor. It is designed for VHF band power amplifier applications.
Parametrics
2SC2178 absolute maximum ratings: (1)VCBO collector to base voltage: 35V; (2)VEBO emitter to base voltage: 3.5V; (3)VCEO collector to emitter voltage: 18V; (4)IC collector current: 3.5A; (5)PC colector dissipation: 35W; (6)Tj junction temperature: 175℃; (7)Tstg storage temperature: -65 to 175℃.
Features
2SC2178 features: (1)Output power: Po=15W(Min)(f=175MHz, VCC=12.5V, Pi=1.3W); (2)100% tested for load mismatch stress at all phase angles with 30:1 VSWR @ VCC=15V, Pi=1.3W, f=175MHz.
Diagrams
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2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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