2SC2540

silicon NPN epitaxial planar type transistor, DIP, 30 to 35 watts, 175MHz, 13.5V

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Price:: US $18.00~22.00 / piece [Get Latest Price]

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	US $18.00~22.00

PartNumber:: 2SC2540

Brand:: MITSUBISHI Electronics - MITSUBISHI | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-03-24

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Part Number:2SC2540
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Product Summary

The 2SC2540 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in UHF band mobile radio applications. The 2SC2540 is used in 30 to 35 watts output power amplifiers in UHF band mobile radio applications.

Parametrics

2SC2540 absolute maximum ratings: (1)VCBO collector to base voltage: 35V; (2)VEBO emitter to base voltage: 4V; (3)VCEO collector to emitter voltage: 17V; (4)IC collector current: 10A; (5)PC colector dissipation: 4.5W; (6)Tj junction temperature: 175℃; (7)Tstg storage temperature: -55 to 175℃.

Features

2SC2540 features: (1)High power gain: Gpe≧8.2dB @ VCC=13.5V, f=175MHz, Pin=40W; (2)Emitter ballasted construction and gold metallization for high reliability and good performances; (3)Low thermal resistance ceramic package with flange; (4)Ability of withstand more than 20:1 load VSWR when operated at VCC=15.2V, Po=40W, f=175MHz, TC=25℃.