Product Summary

The 2SD1047 is an NPN triple diffused Ppanar silicon transistor which is used in 140V/12A AF 60W output applications.

Parametrics

2SD1047 absolute maximum ratings: (1)Collector-to-base voltage: (-)160 V; (2)Collector-to-emitter voltage: (-)140 V; (3)Emitter-to-base voltage: (-)6 V; (4)Collector current: (-)12 V; (5)Collector current( pulse): (-)15 A; (6)Collector dissipation, Tc=25℃: 100 W; (7)Junction temperature: 150 ℃; (8)Storage temperature: -40 to +150℃.

Features

2SD1047 features: (1)Capable of being mounted easily because of one-point fixing type plastic molded package (Inter-changeable with TO-3); (2)Wide ASO because of on-chip ballast resistance; (3)Good depenedence of fT on current and excellent high frequency responce.

Diagrams

2SD1047 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SD1047
2SD1047

STMicroelectronics

Transistors Bipolar (BJT) IGBT & Power Bipolar

Data Sheet

0-1: $1.23
1-10: $1.19
10-100: $1.09
100-250: $1.06
2SD1047P
2SD1047P

Other


Data Sheet

Negotiable 
2SD1047P-E
2SD1047P-E


TRANS NPN 140V 12A TO-3PB

Data Sheet

Negotiable