Product Summary

The 2SJ162 is a silicon P-channel MOSFET for low frequency power amplifier.

Parametrics

2SJ162 absolute maximum ratings: (1)Drain to source voltage: -160 V; (2)Gate to source voltage VGSS: ±15 V; (3)Drain current ID: -7A; (4)Body to drain diode reverse drain current IDR: -7A; (5)Channel dissipation Pch: 100 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: –55 to +150℃.

Features

2SJ162 features: (1)Good frequency characteristic; (2)High speed switching; (3)Wide area of safe operation; (4)Enhancement-mode; (5)Good complementary characteristics; (6)Equipped with gate protection diodes; (7)Suitable for audio power amplifier.

Diagrams

2SJ162 outline

Image Part No Mfg Description Data Sheet Download Pricing
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2SJ162-E
2SJ162-E


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Data Sheet

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2SJ162
2SJ162


MOSFET P-CH 160V 7A TO-3P

Data Sheet

Negotiable