(China (Mainland))
Product Summary
2SJ18 is a kind of silicon p-channel MOSFET which is used for high speed power switching.
Parametrics
2SJ18 absolute maximum ratings: (1)Drain to source voltage: –600 V; (2)Gate to source voltage: ±15 V; (3)Drain current: –0.5 A; (4)Drain peak current ID (pulse): –1.0 A; (5)Body to drain diode reverse drain current: –0.5 A; (6)Channel dissipation: 20 W; (7)Channel temperature: 150 ℃; (8)Storage temperature: –55 to +150℃.
Features
2SJ18 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switching regulator and DC-DC converter.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SJ186 |
Other |
|
Data Sheet |
Negotiable |
|
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2SJ185 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SJ183 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SJ181S |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ181L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ181(S) |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ181(L) |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ181 |
Other |
|
Data Sheet |
Negotiable |
|
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