(China (Mainland))
Product Summary
The 2SJ79 is a silicon P-channel MOSFET for high frequency and low frequency power amplifier, high speed switching.
Parametrics
2SJ79 absolute maximum ratings: (1)Drain to source voltage: -200 V; (2)Gate to source voltage VGSS: ±15 V; (3)Drain current ID: -500 mA; (4)Body to drain diode reverse drain current IDR: -500 mA; (5)Channel dissipation Pch: 1.75/30 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: –45 to +150℃.
Features
2SJ79 features: (1)Suitable for direct mounting; (2)High forward transfer admittance; (3)Excellent frequency response; (4)Enhancement-mode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SJ79 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2SJ74 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ74-BL |
Toshiba |
JFET X34 Pb Small Signal Trans |
Data Sheet |
Negotiable |
|
||||
|
2SJ74-V |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ75 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ76 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SJ77 |
Other |
|
Data Sheet |
Negotiable |
|
||||
