(China (Mainland))
Product Summary
2SK135 is a kind of silicon p-channel MOSFET which is also a kind of low-frequency power amplifier.
Parametrics
2SK135 absolute maximum ratings:(1)Drain-source voltage: 160V; (2)Gate-Source voltage: ±14V; (3)Drain current: 7A; (4)Body-Drain diode reverse drain current: 7A; (5)Channel Dissipation: 100w; (6)Channel temperature: 150℃; (7)Storage temperature: -55 ~+150℃.
Features
2SK135 features: (1)High power gain; (2)Excellent frequency response; (3)High speed switching; (4)Wide area of safe operation; (5)Enhancement-mode; (6)Good complementary characteristics; (7)Equipped with Gate protection diodes.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2SK1358 |
Other |
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Data Sheet |
Negotiable |
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2SK1359 |
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MOSFET N-CH 1KV 5A TO-3PN |
Data Sheet |
Negotiable |
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2SK1359(F) |
Toshiba |
MOSFET N-Ch FET RDS 3.0 Ohm IDSS 300uA VDSS 1kV |
Data Sheet |
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