(China (Mainland))
Product Summary
The 2SK175 is a silicon N-Channel MOS FET.
Parametrics
2SK175 absolute maximum ratings: (1)Drain to source voltage VDSS: 180 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 8 A; (4) 8Body to drain diode reverse drain current IDR: 8 A; (5)Channel dissipation Pch: 125 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK175 features: (1)High power gain; (2)Excellent frequency response; (3)High speed switching; (4)Wide area of safe operation; (5)Enhancement-mode; (6)Good complementary characteristics; (7)Equipped with Gate protection diodes.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK1750 |
Other |
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Data Sheet |
Negotiable |
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2SK1752 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK1758 |
Other |
|
Data Sheet |
Negotiable |
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