Product Summary

The 2SK176 is a silicon N-Channel MOS FET.

Parametrics

2SK176 absolute maximum ratings: (1)Drain to source voltage VDSS: 250 V; (2)Gate to source voltage VGSS: ±30 V; (3)Drain current ID: 12 A; (4)Drain peak current ID(pulse): 48 A; (5)Body to drain diode reverse drain current IDR: 12 A; (6)Channel dissipation Pch: 75 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.

Features

2SK176 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switchingregulator, DC-DC converter.

Diagrams

2SK176 package diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SK1760
2SK1760

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Data Sheet

Negotiable 
2SK1761
2SK1761

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2SK1762
2SK1762

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2SK1764
2SK1764

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Data Sheet

Negotiable