(China (Mainland))
Product Summary
The 2SK201 is a silicon N-channel MOS type FET for audio frequency power amplifier applications.
Parametrics
2SK201 absolute maximum ratings: (1)Drain-source voltage VDSS: 180 V; (2)Gate-source voltage VGSS: ±20 V; (3)Drain current (Note 1) ID: 1 A; (4)Drain power dissipation (Tc = 25℃) PD: 25 W; (5)Channel temperature Tch: 150 ℃; (6)Storage temperature range Tstg: -55 to 150℃.
Features
2SK201 features: (1)High breakdown voltage: VDSS = 180 V; (2)High forward transfer admittance: |Yfs| = 0.7 S (typ.); (3)Complementary to 2SJ313.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK2010 |
Other |
|
Data Sheet |
Negotiable |
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2SK2011 |
Other |
|
Data Sheet |
Negotiable |
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|
2SK2012 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2013 |
Other |
|
Data Sheet |
Negotiable |
|
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2SK2018-01L |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2018-01S |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK2019-01 |
Other |
|
Data Sheet |
Negotiable |
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