(China (Mainland))
Product Summary
The 2SK216 is a silicon N-channel MOSFET for high frequency and low frequency power amplifier, high speed switching.
Parametrics
2SK216 absolute maximum ratings: (1)Drain to source voltage: 200 V; (2)Gate to source voltage VGSS: ±15 V; (3)Drain current ID: 500 mA; (4)Body to drain diode reverse drain current IDR: 500 mA; (5)Channel dissipation Pch: 30 W; (6)Channel temperature Tch: 150 ℃; (7)Storage temperature Tstg: –45 to +150℃.
Features
2SK216 features: (1)Suitable for direct mounting; (2)High forward transfer admittance; (3)Excellent frequency response; (4)Enhancement-mode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK216 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2160 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2161 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2162 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2165-01 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2166-01R |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2167 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2168 |
Other |
|
Data Sheet |
Negotiable |
|
||||
