(China (Mainland))
Product Summary
The BLV10 is an NPN silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The BLV10 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. The BLV10 has a 3/8” flange envelope with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLV10 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0)peak value VCESM: max. 36 V; (2)Collector-emitter voltage (open base) VCEO: max. 18 V; (3)Emitter-base voltage (open collector) VEBO: max. 4 V; (4)Collector current (average) IC(AV): max. 1,5 A; (5)Collector current (peak value); f > 1 MHz ICM: max. 4,0 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃ Prf: max. 20 W; (7)Storage temperature Tstg: -65 to + 150 ℃; (8)Operating junction temperature Tj: max. 200 ℃.
Features
BLV10 specifications: (1)Collector-emitter saturation voltage IC = 2 A; IB = 0,4 A VCEsat: typ. 0,85 V; (2)Transition frequency at f = 100 MHz -IE = 0,75 A; VCB = 13,5 V fT: typ. 950 MHz; -IE = 2 A; VCB = 13,5 V fT: typ. 850 MHz; (3)Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Cc: typ. 16,5 pF; (4)Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 13,5 V Cre: typ. 12 pF; (5)Collector-flange capacitance Ccf: typ. 2 pF.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLV10 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV100 |
Other |
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Data Sheet |
Negotiable |
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BLV103 |
Other |
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Data Sheet |
Negotiable |
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