(China (Mainland))
Product Summary
The BLV12 is an NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. The BLV12 is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange.
Parametrics
BLV12 absolute maximum ratings: (1)VCBO collector-base voltage: 36 V; (2)VCEO collector-emitter voltage: 16 V; (3)VEBO emitter-base voltage: 3 V; (4)IC, IC(AV) collector current: 6 A; (5)ICM collector current: 18 A; (6)Ptot total power dissipation: 100 W; (7)Tstg storage temperature range: -65 to 150 ℃; (8)Tj junction operating temperature: 200 ℃.
Features
BLV12 features: (1)Emitter-ballasting resistors for an optimum temperature profile; (2)Excellent reliability; (3)Withstands full load mismatch.
Diagrams
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 BLV12 |
Other |
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Data Sheet |
Negotiable |
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Advanced Semiconductor, Inc. |
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Data Sheet |
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BLV100 |
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Data Sheet |
Negotiable |
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BLV103 |
Other |
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Data Sheet |
Negotiable |
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BLV11 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV12 |
Other |
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Data Sheet |
Negotiable |
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BLV193 |
Other |
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Data Sheet |
Negotiable |
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