Product Summary

The BLV31 is a NPN silicon RF power transistor. It is designed for use in VHF amplifiers.

Parametrics

BLV31 absolute maximum ratings: (1)IC: 3A; (2)VCB: 60 V; (3)PDISS: 48 W @ TC = 25 ℃; (4)TJ: -65 ℃ to +200 ℃; (5)TSTG: -65 ℃ to +150 ℃; (6)θJC: 3.5 ℃/W.

Features

BLV31 features: (1)PG = 16.5 dB Typical at 224 MHz; (2)Omnigold Metallization System.

Diagrams

BLV31 package style

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV31
BLV31
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV30
BLV30
Other

Data Sheet
Negotiable 
BLV31
BLV31
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
BLV32F
BLV32F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
BLV33
BLV33
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
BLV34
BLV34
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80