Product Summary

The BLV32F is an NPN silicon RF power transistor. It is designed for in linear v.h.f. amplifiers of television transmitters and transporters.

Parametrics

BLV32F absolute maximum ratings: (1)IC: 4.0 A; (2)VCBO: 60 V; (3)VCEO: 32 V; (4)VCES: 60 V; (5)VEBO: 4.0 V; (6)PDISS: 82 W @ TC = 25 ℃; (7)TJ: -65 ℃ to +200 ℃; (8)TSTG: -65 ℃ to +150 ℃; (9)θJC: 2.1 ℃/W.

Features

BLV32F features: (1)Diffused emitter ballasting resistors; (2)PG = 16 dB at 10 W/224 MHz; (3)Omnigold Metalization System.

Diagrams

BLV32F dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV32F
BLV32F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV30
BLV30
Other

Data Sheet
Negotiable 
BLV31
BLV31
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
BLV32F
BLV32F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
BLV33
BLV33
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
BLV34
BLV34
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80