(China (Mainland))
Product Summary
The BLV75 is an NPN silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. The BLV75 has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange.
Parametrics
BLV75 absolute maximum ratings: (1)Collector-base voltage (open emitter)peak value VCBOM: max. 36 V; (2)Collector-emitter voltage (open base) VCEO: max. 16,5 V; (3)Emitter-base voltage (open collector) VEBO: max. 4 V; (4)Collector current d.c. or average IC: max. 15 A; peak value; f > 1 MHz ICM: max. 45 A; (5)Total power dissipation at Tmb = 25 ℃; f > 1 MHz Ptot: max. 150 W; (6)Storage temperature Tstg: -65 to + 150 ℃; (7)Operating junction temperature Tj: max. 200 ℃.
Features
BLV75 features: (1)multi-base structure and emitter-ballasting resistors for an optimum temperature profile; (2)gold metallization ensures excellent reliability; (3)internal matching to achieve an optimum wideband capability and high power gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLV75/12 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
BLV75/12 |
Other |
|
Data Sheet |
Negotiable |
|
||||
