Product Summary
The BLV80 is an NPN silicon RF power transistor. It is designed for 28 Volt Class C VHF Power AmplifierApplications up to 175 MHz.
Parametrics
BLV80 absolute maximum ratings: (1)IC: 9.0 A; (2)VCBO: 65 V; (3)VCEO: 35 V; (4)PDISS: 117 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 1.5 ℃/W.
Features
BLV80 features: (1)ηc = 65 % min. at 80 W/175 MHz; (2)PG = 6.5 dB min. at 80 W/175 MHz; (3)Omnigold Metalization System.
Diagrams
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