(China (Mainland))
Product Summary
The BLW29 NPN silicon planar epitaxial VHF power transistor is intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the BLW29 is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz.
Parametrics
BLW29 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0), peak value VCESM: max. 36 V; (2)Collector-emitter voltage (open base) VCEO: max. 18 V; (3)Emitter-base voltage (open collector) VEBO: max. 4 V; (4)Collector current (average) IC(AV): max. 2,75 A; (5)Collector current (peak value); f > 1 MHz ICM: max. 8 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃: max. 53 W; (7)Storage temperature: -65 to + 150 ℃; (8)Operating junction temperature: max. 200 ℃.
Features
BLW29 characteristics: (1)Collector-emitter breakdown voltage, VBE = 0; IC = 15 mA: V(BR) CES > 36 V; (2)Collector-emitter breakdown voltage, open base; IC = 100 mA: V(BR)CEO > 18 V; (3)Emitter-base breakdown voltage, open collector; IE = 5 mA V(BR): EBO > 4V; (4)Collector cut-off current, VBE = 0; VCE = 18 V: ICES < 5mA; (5)Second breakdown energy; L = 25 mH; f = 50 Hz, open base: ESBO > 4mJ; RBE =10Ω ESBR > 4mJ.
Diagrams
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