Product Summary

The BLW31 is an NPN silicon RF power transistor. It is designed for 108-175 MHz applications. The BLW31 utilizes diffused emitter resistors to achieve good VSWR capability.

Parametrics

BLW31 absolute maximum ratings: (1)IC: 4.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)VEBO: 4.0 V; (5)PDISS: 40 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 4.4 ℃/W.

Features

BLW31 features: (1)Common Emitter-Class-C; (2)PG = 10 dB at 30 W/150 MHz; (3)Omnigold Metalization System.

Diagrams

BLW31 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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BLW31
BLW31

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Image Part No Mfg Description Data Sheet Download Pricing
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BLW30
BLW30

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BLW31
BLW31

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BLW32
BLW32

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $43.20
1-10: $36.00
10-25: $32.40
25-50: $28.80
BLW33
BLW33

Other


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Negotiable 
BLW34
BLW34

Other


Data Sheet

Negotiable