(China (Mainland))
Product Summary
The BLW75 is an NPN silicon RF power transistor. It is designed for 25V Large-Signal Amplifier Applications, TV Transposers, and Transmitters Operating in Band lll.
Parametrics
BLW75 absolute maximum ratings: (1)IC: 4.0 A; (2)VCB: 60 V; (3)VCE: 32 V; (4)PDISS: 60 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 1.9 ℃/W.
Features
BLW75 characteristics: (1)BVCER: 60 V; (2)BVCBO: 60 V; (3)BVCEO: 30 V; (4)BVEBO: 4.0 V; (5)hFE: 20 to 45; (6)Cob: 90 to 120 pF; (7)Cre: 55 pF; (8)fT: 800 MHz.
Diagrams
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 BLW75 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BLW75 |
Other |
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Data Sheet |
Negotiable |
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BLW76 |
TriQuint Semiconductor |
Transistors RF Bipolar Power RF Bipolar Trans |
Data Sheet |
Negotiable |
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BLW77 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW78 |
Other |
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Data Sheet |
Negotiable |
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