Product Summary

The BLW85 is an NPN silicon RF power transistor. It is designed for Class C Amplifier Applications in VHF Mobile Radios.

Parametrics

BLW85 absolute maximum ratings: (1)IC: 9.0 A; (2)VCBO: 36 V; (3)VCEO: 16 V; (4)VEBO: 4.0 V; (5)PDISS: 105 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 1.6 ℃/W.

Features

BLW85 features: (1)PG = 9.5 dB Typ. at 40 W /175 MHz; (2)ηc = 60% Typ. at 40 W /175 MHz; (3)Omnigold Metalization System.

Diagrams

BLW85 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLW85
BLW85

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $43.20
1-10: $36.00
10-25: $32.40
25-50: $28.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLW80
BLW80

Other


Data Sheet

Negotiable 
BLW81
BLW81

Other


Data Sheet

Negotiable 
BLW83
BLW83

Other


Data Sheet

Negotiable 
BLW85
BLW85

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $43.20
1-10: $36.00
10-25: $32.40
25-50: $28.80
BLW86
BLW86

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $46.80
1-10: $39.00
10-25: $35.10
25-50: $31.20
BLW87
BLW87

Other


Data Sheet

Negotiable