(China (Mainland))
Product Summary
The BLW90 is an NPN silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The BLW90 is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The BLW90 is housed in a 1/4” capstan envelope with a ceramic cap. All leads are isolated from the stud.
Parametrics
BLW90 absolute maximum ratings: (1)Collector-emitter voltage(peak value); VBE = 0 VCESM: max. 60 V; open base VCEO: max. 30 V; (2)Emitter-base voltage (open collector) VEBO: max. 4 V; (3)Collector current d.c. or average IC; IC(AV): max. 0,62 A; (peak value); f > 1 MHz ICM: max. 2,0 A; (4)Total power dissipation (d.c. and r.f.) up to Tmb = 25 ℃ Ptot: max. 18,6 W; (5)Storage temperature Tstg: -65 to + 150 ℃; (6)Operating junction temperature Tj: max. 200 ℃.
Features
BLW90 specifications: (1)Collector-emitter saturation voltage IC = 1,0 A; IB = 0,2 A VCEsat: typ. 0,9 V; (2)Transition frequency at f = 500 MHz -IE = 0,3 A; VCB = 28 V fT: typ. 1,2 GHz; -IE = 1,0 A; VCB = 28 V fT: typ. 0,9 GHz; (3)Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Cc: typ. 8,4 pF; (4)Feedback capacitance at f = 1 MHz IC = 20 mA; VCE = 28 V Cre: typ. 3,6 pF; (5)Collector-stud capacitance Ccs: typ. 1,2 pF.
Diagrams
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Other |
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Negotiable |
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BLW98 |
Advanced Semiconductor, Inc. |
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