(China (Mainland))
Product Summary
The BLW97 is an NPN silicon RF power transistor. It is designed for High voltage applications up tp 30 MHz.
Parametrics
BLW97 absolute maximum ratings: (1)IC: 15 A; (2)VCESM: 65 V; (3)VCEO: 33 V; (4)VEBO: 4.0 V; (5)PDISS: 230 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 0.76 ℃/W.
Features
BLW97 features: (1)PG = 11.5 dB min. at 175 W/30 MHz; (2)IMD3 = -30 dBc max. at 175 W(PEP); (3)Omnigold Metalization System.
Diagrams
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 BLW97 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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BLW96 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLW96/01,112 |
NXP Semiconductors |
Transistors RF Bipolar Power Dual N-CH 340W 10mA |
Data Sheet |
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BLW97 |
Other |
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Data Sheet |
Negotiable |
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BLW98 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW90 |
Other |
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Data Sheet |
Negotiable |
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