Product Summary

The FDD4685 is a P-Channel MOSFET. It has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. The FDD4685 is suitable for Inverter and Power Supplies.

Parametrics

FDD4685 absolute maximum ratings: (1)VDS, Drain to Source Voltage: –40 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID, Drain Current: –32A; (4)EAS, Drain-Source Avalanche Energy: 121 mJ; (5)PD, Power Dissipation: 69W; (6)TJ, Tstg, Operating and Storage Junction Temperature Range: –55 to +150℃.

Features

FDD4685 features: (1)Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A; (2)Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A; (3)High performance trench technology for extremely low rDS(on); (4)RoHS Compliant.

Diagrams

FDD4685 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDD4685
FDD4685
Fairchild Semiconductor
MOSFET -40V P-Channel PowerTrench MOSFET
Data Sheet
0-1: $0.58
1-25: $0.50
25-100: $0.46
100-250: $0.40
FDD4685_F085
FDD4685_F085
Fairchild Semiconductor
MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab
Data Sheet
0-1700: $0.29
1700-2500: $0.27
2500-5000: $0.26
5000-10000: $0.25
FDD4685TF_SB82135
FDD4685TF_SB82135
Fairchild Semiconductor
MOSFET -40V/-32A/27 OHM PCH POWER TRENCH MOSFET
Data Sheet
0-1340: $0.30
1340-2000: $0.28
2000-5000: $0.27
5000-10000: $0.26