Product Summary

The FDN336P P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDN336P is well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

Parametrics

FDN336P absolute maximum ratings: (1)Drain-Source Voltage, VDSS: –20V; (2)Gate-Source Voltage, VGSS: ±8V; (3)Drain Current, Continuous, ID: 1.3A; (4)Drain Current, Pulsed, ID: 10A; (5)Maximum Power Dissipation, PD: 0.5W; (6)Maximum Power Dissipation, PD: 0.46W; (7)Operating and Storage Junction Temperature Range, TJ, TSTG: –55 to +150℃.

Features

FDN336P features: (1)–1.3A, –20V. RDS(ON) = 0.20Ω @ VGS = –4.5V RDS(ON) = 0.27Ω @ VGS = –2.5V; (2)Low gate charge (3.6 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

Diagrams

FDN336P pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDN336P
FDN336P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH -20V

Data Sheet

0-1: $0.27
1-25: $0.22
25-100: $0.16
100-250: $0.14
FDN336P-NL
FDN336P-NL


MOSFET P-CH 20V 1.3A SSOT-3

Data Sheet

Negotiable