(China (Mainland))
Product Summary
The IPS022G is a fully protected dual low side SMART POWER MOSFET. The IPS022G features over-current, over-temperature, ESD protection and drain to source active clamp.The device combines a HEXFET POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switch- ing times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165℃ or when the drain current reaches 5A. The IPS022G restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
Parametrics
IPS022G absolute maximum ratings: (1)Maximum drain to source voltage: 47 V; (2)Maximum input voltage: -0.3 to 7 V; (3)Maximum IN current: -10 to +10 mA; (4)Diode max. continuous current (1)(∑ lsd mosfets, rth=125℃/W): 1.4 A; (5)Diode max. pulsed current (1) (for ea. mosfet): 10 A; (6)Maximum power dissipation(1)(∑ Pd mosfets, rth=125℃/W): 1 W; (7)Electrostatic discharge voltage (Human Body): 4 KV; (8)Electrostatic discharge voltage (Machine Model): 0.5 KV; (9)Max. storage temperature: -55 to 150 ℃; (10)Max. junction temperature: -40 to +150 ℃.
Features
IPS022G features: (1)Over temperature shutdown; (2)Over current shutdown; (3)Active clamp; (4)Low current & logic level input; (5)E.S.D protection.
Diagrams
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 IPS022G |
International Rectifier |
Power Driver ICs IPS 1 Ch Low Side Driver |
Data Sheet |
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IPS022GTR |
International Rectifier |
Power Driver ICs |
Data Sheet |
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