(China (Mainland))
Product Summary
The IRF9130 is a P-channel transistor( (Vdss=-100V, Rds(on)=0.30ohm, Id=-11A). The IRF9130 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
IRF9130 absolute maximum ratings: (1)Continuous Drain Current: -11 A; (2)Continuous Drain Current: -7.0 A; (3)Pulsed Drain Current: -50 A; (4)Max. Power Dissipation: 75 W; (5)Linear Derating Factor: 0.60 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 81 mJ; (8)Avalanche Current: -11 A; (9)Repetitive Avalanche Energy: 7.5 mJ; (10)Peak Diode Recovery dv/dt: -5.5 V/ns; (11)Operating Junction: -55 to 150℃; (12)Storage Temperature Range: -55 to 150℃; (13)Lead Temperature: 300℃ (0.063 in. (1.6mm) from case for 10s); (14)Weight: 11.5 (typical) g.
Features
IRF9130 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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Pricing (USD) |
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 IRF9130 |
Other |
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Data Sheet |
Negotiable |
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IRF9130SMD |
Other |
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Data Sheet |
Negotiable |
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IRF9130SMD05 |
Other |
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Data Sheet |
Negotiable |
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