(China (Mainland))
Product Summary
The K4T1G084QE is a 1Gb DDR2 SDRAM. It is organized as a 32Mbit × 4 I/Os × 8banks, 16Mbit × 8 I/Os × 8banks or 8Mbit × 16 I/Os × 8 banks device. The K4T1G084QE achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. The K4T1G084QE is available in 60ball FBGA(×4/×8) and in 84ball FBGA(×16).
Parametrics
K4T1G084QE absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: - 1.0 V ~ 2.3 V; (2)VDDQ Voltage on VDDQ pin relative to VSS: - 0.5 V ~ 2.3 V; (3)VDDL Voltage on VDDL pin relative to VSS: - 0.5 V ~ 2.3 V; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V ~ 2.3 V; (5)TSTG Storage Temperature: -55 to +100 ℃.
Features
K4T1G084QE features: (1)JEDEC standard VDD = 1.8V±0.1V Power Supply; (2)VDDQ = 1.8V±0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)8 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination.
Diagrams
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