(China (Mainland))
Product Summary
The MJ11032 is a High-Current Complementary Silicon Power Transistor. It is for use as output devices in complementary general purpose amplifier applications.
Parametrics
MJ11032 absolute maximum ratings: (1)Collector-Emitter Voltage: 120V; (2)Collector-Base Voltage: 120V; (3)Emitter-Base Voltage: 5.0V; (4)Collector Current: Continuous:50A, Peak:100A; (5)Base Current - Continuous:2.0A; (6)Total Power Dissipation @ TC = 25℃:200W; (7)Derate Above 25℃ @ TC = 100℃:1.71W/℃; (8)Operating and Storage Junction Temperature Range:-55℃ to +200℃.
Features
MJ11032 features: (1)High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc, hFE = 400 (Min) @ IC = 50 Adc; (2)Curves to 100 A (Pulsed); (3)Diode Protection to Rated IC; (4)Monolithic Construction with Built-In Base-Emitter Shunt Resistor; (5)Junction Temperature to +200℃; (6)Pb-Free Packages are Available.
Diagrams
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Pricing (USD) |
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 MJ11032 |
ON Semiconductor |
Transistors Darlington 50A 120V Bipolar |
Data Sheet |
Negotiable |
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MJ11032G |
ON Semiconductor |
Transistors Darlington 50A 120V Bipolar Power NPN |
Data Sheet |
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