Product Summary

The MJ15025 is a silicon pnp power transistor.

Parametrics

MJ15025 absolute maximum ratings: (1)VEBO Emitter-base voltage Open collector: -5 V; (2)IC Collector current: -16 A; (3)ICM Collector current-peak: -30 A; (4)IB Base current: -5 A; (5)PD Total power dissipation TC=25: 250 W; (6)Tj Junction temperature: 150℃; (7)Tstg Storage temperature: -65~200℃.

Features

MJ15025 features: (1)With TO-3 package; (2)Complement to type; (3)Excellent safe operating area; (4)High DC current gain hFE = 15 (Min) @ IC = 8 Adc.

Diagrams

MJ15025 package outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ15025
MJ15025

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 250W PNP

Data Sheet

Negotiable 
MJ15025G
MJ15025G

ON Semiconductor

Transistors Bipolar (BJT) 16A 250V 250W PNP

Data Sheet

0-1: $2.44
1-25: $2.10
25-100: $1.72
100-500: $1.42