(China (Mainland))
Product Summary
The MJ21196 is a 16 A, 250 V NPN silicon power transistor which utilizes Perforated Emitter technology, and it is specifically designed for high power audio output, disk head positioners and linear applications.
Parametrics
MJ21196 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 250 Vdc; (2)Collector-Base Voltage VCBO: 400 Vdc; (3)Emitter-Base Voltage VEBO: 5.0 Vdc; (4)Collector-Emitter Voltage: 1.5 V VCEX 400 Vdc; (5)Collector Current, Continuous: 16 Adc; (6)Collector Current, Peak (Note 1): 30 Adc; (7)Base Current, Continuous IB: 5.0 Adc; (8)Total Power Dissipation @ TC = 25℃: 250 W; (9)Total Power Dissipation Derate Above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range:- 65 to +200℃.
Features
MJ21196 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain: hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 3 A, 80 V, 1 Second; (5)Pb-Free Packages are Available.
Diagrams
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 MJ21196 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W NPN |
Data Sheet |
Negotiable |
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MJ21196G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W NPN |
Data Sheet |
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