(China (Mainland))
Product Summary
The MJW21194 is a 200 W NPN Audio Bipolar power transistor which utilizes Perforated Emitter technology, and it is specifically designed for high power audio output, disk head positioners and linear applications.
Parametrics
MJW21194 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 250 Vdc; (2)Collector-Base Voltage VCBO: 400 Vdc; (3)Emitter-Base Voltage VEBO: 5.0 Vdc; (4)Collector-Emitter Voltage: 1.5 V VCEX 400 Vdc; (5)Collector Current, Continuous: 16 Adc; (6)Collector Current, Peak (Note 1): 30 Adc; (7)Base Current, Continuous IB: 5.0 Adc; (8)Total Power Dissipation @ TC = 25℃: 200 W; (9)Total Power Dissipation Derate Above 25℃: 1.43 W/℃; (10)Operating and Storage Junction Temperature Range:- 65 to +150℃.
Features
MJW21194 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain: hFE = 20 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 2.25 A, 80 V, 1 Second; (5)Pb-Free Packages are Available.
Diagrams
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 MJW21194 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W NPN |
Data Sheet |
Negotiable |
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MJW21194G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 200W NPN |
Data Sheet |
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