(China (Mainland))
Product Summary
The MRF224 is an NPN Silicon RF power transistor. It is designed for 12.5V, VHF large signal power amplifier applications required in commercial and industrial equipment operation to VHF frequencies.
Parametrics
MRF231 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 7.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 80 Watts, Derate above 25℃: 0.46 W/℃; (6)Storage Temperature Range Tstg: – 65 to 200 ℃.
Features
MRF231 features: (1)Specified 12.5V, 175MHz characteristics, Output Power=40W, power Gain=4.5dB min, Efficiency: 70% min.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 MRF224 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF20030 |
Other |
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Data Sheet |
Negotiable |
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MRF20030R |
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Data Sheet |
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MRF20060 |
Other |
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Data Sheet |
Negotiable |
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MRF20060_1248487 |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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