(China (Mainland))
Product Summary
The MRF231 is an NPN Silicon RF power transistor. It is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range.
Parametrics
MRF231 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 1.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 10 Watts, Derate above 25℃: 57.1 W/℃; (6)Storage Temperature Range Tstg: – 65 to 200 ℃.
Features
MRF231 features: (1)Specified 12.5V, 90MHz characteristics, Output Power: 3.5W, Minimum Gain: 10dB, Efficiency: 55%.
Diagrams
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 MRF231 |
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MRF20030 |
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MRF20030R |
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MRF20060 |
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MRF20060_1248487 |
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MRF20060R |
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MRF20060RS |
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