(China (Mainland))
Product Summary
The MRF316 is an NPN silicon rf power transistor. It is designed for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.
Parametrics
MRF316 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 9.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 220 Watts, Derate above 25℃: 1.26 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
MRF316 features: (1)Guaranteed Performance at 150 MHz, 28 Vdc, Output Power = 80 Watts, Minimum Gain = 10 dB; (2)Built-in Matching Network for Broadband Operation; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications.
Diagrams
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 MRF316 |
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