Product Summary

The MRF449 is an NPN silicon rf power transistor. It is designed for power amplifier application in industrial, commercial and amateur radio equipment to 30MHz.

Parametrics

MRF449 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 20 Vdc; (2)Collector–Base Voltage VCBO: 40 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Total Device Dissipation @ TC = 25℃ PD: 60 Watts, Derate above 25℃: 343 W/℃; (5)Storage Temperature Range Tstg: – 65 to +150 ℃.

Features

MRF449 features: (1)Specified 12.5 Volts, 30MHz characteristics: output power=30 Watts, Minimum gain=12 dB, Efficiency=50%.

Diagrams

MRF449 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF449
MRF449
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Data Sheet
Negotiable 
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