Product Summary

The STW20NA50 is a power mosfet which represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the power mosfets low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. The applications of STW20NA50 are: (1)High current, high speed switching; (2)Switch mode powersupplies (smps); (3)DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.

Parametrics

STW20NA50 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 500 V; (3)VGS Gate-source Voltage: ± 30 V; (4)ID Drain Current (continuous) at Tc = 25 ℃: 20 A; (5)ID Drain Current (continuous) at Tc = 100 ℃: 12.7 A; (6)IDMDrain Current (pulsed): 80 A; (7)Ptot Total Dissipation at Tc = 25 ℃: 250 W; (8)Derating Factor: 2 W/℃; (9)Storage Temperature: -65 to 150℃.

Features

STW20NA50 features: (1)Typical RDS(on) = 0.22 W; (2)Extremely high dv/dt capability; (3)± 30V gate to source voltage rating; (4)100% avalanche tested; (5)Repetitive avalanche data at 100℃; (6)Very low intrinsic capacitances; (7)Gate charge minimized.

Diagrams

STW20NA50 INTERNAL SCHEMATIC DIAGRAM

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