Product Summary

The 2N3766 is an NPN power silicon transistor.

Parametrics

2N3766 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 60 Vdc; (2)Collector-Base Voltage, VCBO: 80 Vdc; (3)Emitter-Base Voltage, VEBO: 6.0 Vdc; (4)Base Current, IB: 2.0Adc; (5)Collector Current, IC: 4.0 Adc; (6)Total Power Dissipation@ TC = +250℃, PT: 25 W; (7)Operating & Storage Temperature Range, Top, Tstg: -65 to +200℃.

Features

2N3766 features: (1)Collector-Emitter Breakdown Voltage, V(BR)CEO: 60 Vdc; (2)Collector-Emitter Cutoff Current, ICEO: 500mAdc; (3)Collector-Emitter Cutoff Current, ICEX: 10 mAdc; (4)Collector-Base Cutoff Current, ICBO: 10 mAdc; (5)Emitter-Base Cutoff Current, IEBO: 500 mAdc.

Diagrams

2N3766 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N3766
2N3766
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N3716
2N3716
Central Semiconductor
Transistors Bipolar (BJT) NPN GP Power
Data Sheet
0-1: $1.99
1-25: $1.94
25-100: $1.88
100-250: $1.82
2N3799
2N3799
Central Semiconductor
Transistors Bipolar (BJT) Low Noise Ampl
Data Sheet
0-2000: $0.82
2N3764
2N3764
Other

Data Sheet
Negotiable 
2N3765
2N3765
Other

Data Sheet
Negotiable 
2N3766
2N3766
Other

Data Sheet
Negotiable 
2N3773G
2N3773G
ON Semiconductor
Transistors Bipolar (BJT) 16A 140V 150W NPN
Data Sheet
0-1: $2.11
1-25: $1.72
25-100: $1.55
100-500: $1.40