(China (Mainland))
Product Summary
The 2SB755 is a silicon PNP power transistor for power amplifier applications.
Parametrics
2SB755 absolute maximum ratings: (1)Collector-base voltage: -150 V; (2)Collector-emitter voltage: -150 V; (3)Emitter-base voltage: -5 V; (4)Collector current: -12 A; (5)Base current: -1.2 A; (6)Collectorl power dissipation, TC=25℃: 120 W; (7)Junction temperature: 150 ℃; (8)Storage temperature: -55~150 ℃.
Features
2SB755 features: (1)With MT-200 package; (2)Complement to type 2SD845; (3)High transition frequency; (4)High breakdown voltage :VCEO=-150V(min).
Diagrams
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 2SB755 |
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2SB703 |
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2SB705A |
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2SB705B |
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2SB707 |
Other |
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Data Sheet |
Negotiable |
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2SB708 |
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Negotiable |
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