(China (Mainland))
Product Summary
The 2SD845 is a silicon NPN power transistor for power amplifier applications.
Parametrics
2SD845 absolute maximum ratings: (1)Collector-base voltage: 150 V; (2)Collector-emitter voltage: 150 V; (3)Emitter-base voltage: 5 V; (4)Collector current: 12 A; (5)Base current: -12 A; (6)Collectorl power dissipation, TC=25℃: 120 W; (7)Junction temperature: 150 ℃; (8)Storage temperature: -55~150 ℃.
Features
2SD845 features: (1)High breakdown voltage: VCEO = 150 V (min) ; (2)Complementary to 2SB755; (3)Recommended for 80-W high-fidelity audio frequency amplifier output stage; (4) High transition frequency: fT=20 MHz(typ).
Diagrams
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 2SD845 |
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2SD845 |
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