Product Summary
The BLV11 is an NPN silicon RF power transistor. It is designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz.
Parametrics
BLV11 absolute maximum ratings: (1)IC: 3.0 A; (2)VCB: 36 V; (3)VCE: 18 V; (4)PDISS: 37 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 4.6 ℃/W.
Features
BLV11 features: (1)PG = 9.0 dB Typical at 175 MHz; (2)Emitter Ballasting; (3)Omnigold Metalization System.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLV11 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BLV10 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV11 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLV194 |
Other |
Data Sheet |
Negotiable |
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Other |
Data Sheet |
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BLV12 |
Other |
Data Sheet |
Negotiable |
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BLV103 |
Other |
Data Sheet |
Negotiable |
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