(China (Mainland))
Product Summary
The BLW85 is an NPN silicon RF power transistor. It is designed for Class C Amplifier Applications in VHF Mobile Radios.
Parametrics
BLW85 absolute maximum ratings: (1)IC: 9.0 A; (2)VCBO: 36 V; (3)VCEO: 16 V; (4)VEBO: 4.0 V; (5)PDISS: 105 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 1.6 ℃/W.
Features
BLW85 features: (1)PG = 9.5 dB Typ. at 40 W /175 MHz; (2)ηc = 60% Typ. at 40 W /175 MHz; (3)Omnigold Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BLW85 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BLW80 |
Other |
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Data Sheet |
Negotiable |
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BLW85 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW898 |
Other |
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Data Sheet |
Negotiable |
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BLW87 |
Other |
|
Data Sheet |
Negotiable |
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BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW83 |
Other |
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Data Sheet |
Negotiable |
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