(China (Mainland))
Product Summary
The BLW86 is a N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The BLW86 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLW86 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0) peak value: max. 65 V; (2)Collector-emitter voltage (open base): max. 36 V; (3)Emitter-base voltage (open-collector): max. 4 V; (4)Collector current (average): max. 4 A; (5)Collector current (peak value); f > 1 MHz: max. 12 A; (6)R.F. power dissipation (f > 1 MHz); Tmb = 25 ℃: max. 105 W; (7)Storage temperature: -65 to +150 ℃; (8)Operating junction temperature: max. 200 ℃.
Features
BLW86 characteristics: (1)Collector-emitter breakdown voltage, VBE = 0; IC = 25 mA: V(BR)CES > 65 V; (2)Collector-emitter breakdown voltage, open base; IC = 100 mA: V(BR)CEO > 36 V; (3)Emitter-base breakdown voltage, open collector; IE = 10 mA: V(BR)EBO > 4 V; (4)Collector cut-off current, VBE = 0; VCE = 36: V ICES < 10 mA; (5)Second breakdown energy; L = 25 mH; f = 50 Hz, open base: ESBO > 8 mJ, RBE = 10 W: ESBR > 8 mJ; (6)D.C. current gain: IC = 2,5 A; VCE = 5 V: typ. 45.
Diagrams
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 BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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Quantity | ||||||||||||
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BLW86 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW85 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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BLW83 |
Other |
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Data Sheet |
Negotiable |
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BLW81 |
Other |
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Data Sheet |
Negotiable |
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BLW80 |
Other |
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Data Sheet |
Negotiable |
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BLW898 |
Other |
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Data Sheet |
Negotiable |
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