(China (Mainland))
Product Summary
The BUX98AP is a silicon Multiepitaxial Mesa NPN transistor in TO-247 plastic package. It is intended for use in industrial applications from single and three-phase mains operation. The applications of the BUX98AP include high frequency and efficency converters, linear and switching industrial equipment.
Parametrics
BUX98AP absolute maximum ratings: (1)Collector-Emitter Voltage (RBE = ≤ 10 W): 1000 V; (2)Collector-Base Voltage (VBE = 0): 1000 V; (3)Collector-Emitter Voltage (IB = 0): 450 V; (4)Emitter-Base Voltage (IC = 0): 7 V; (5)Collector Current: 24 A; (6)Collector Peak Current (tp < 5 ms): 36 A; (7)Base Current: 5 A; (8)Base Peak Current (tp < 5 ms): 8 A; (9)Total Power Dissipation at Tcase < 25 ℃: 200 W; (10)Storage Temperature: -65 to 150 ℃; (11)Max Operating Junction Temperature: 150 ℃.
Features
BUX98AP features: (1)STMicroelectronics preferred salestype; (2)NPN transistor; (3)high voltage capability; (4)high current capability; (5)fast switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUX98AP |
STMicroelectronics |
Transistors Bipolar (BJT) TO-218 NPN HI-V SW |
Data Sheet |
Negotiable |
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 |
BUX98APW |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Volt Power LTB 9-2009 |
Data Sheet |
Negotiable |
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