(China (Mainland))
Product Summary
The IXTM21N50 is a MegaMOS FET. It is an N-Channel Enhancement Mode. Applications include: Switch-mode and resonant-mode, power supplies, Motor controls, Uninterruptible Power Supplies (UPS), DC choppers.
Parametrics
IXTM21N50 specifications: (1)VDSS: 500 V; (2)VDGR: 500 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 21 A; (6)IDM: 84 A; (7)PD: 300 W; (8)TJ: -55 to +150 ℃; (9)TJM: 150 ℃; (10)Tstg: -55 to +150 ℃; (11)Md: 1.13/10 Nm/lb.in.; (12)Weight: TO-204 = 18 g, TO-247 = 6 g; (13)Maximum lead temperature for soldering: 300 ℃.
Features
IXTM21N50 features: (1)International standard packages; (2)Low RDS (on) HDMOS process; (3)Rugged polysilicon gate cell structure; (4)Low package inductance (< 5 nH)- easy to drive and to protect; (5)Fast switching times.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXTM21N50 |
Ixys |
MOSFET 21 Amps 500V 0.23 Rds |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXTM21N50 |
Ixys |
MOSFET 21 Amps 500V 0.23 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXTM40N30 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
IXTM50N20 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
IXTM20N60 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
IXTM13N80 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
IXTM12N90 |
Ixys |
MOSFET 12 Amps 900V 0.9 Ohms Rds |
Data Sheet |
Negotiable |
|
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