Product Summary

The MJ15025 is a silicon pnp power transistor.

Parametrics

MJ15025 absolute maximum ratings: (1)VEBO Emitter-base voltage Open collector: -5 V; (2)IC Collector current: -16 A; (3)ICM Collector current-peak: -30 A; (4)IB Base current: -5 A; (5)PD Total power dissipation TC=25: 250 W; (6)Tj Junction temperature: 150℃; (7)Tstg Storage temperature: -65~200℃.

Features

MJ15025 features: (1)With TO-3 package; (2)Complement to type; (3)Excellent safe operating area; (4)High DC current gain hFE = 15 (Min) @ IC = 8 Adc.

Diagrams

MJ15025 package outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJ15025G
MJ15025G
ON Semiconductor
Transistors Bipolar (BJT) 16A 250V 250W PNP
Data Sheet
0-1: $2.44
1-25: $2.10
25-100: $1.72
100-500: $1.42
MJ15025
MJ15025
ON Semiconductor
Transistors Bipolar (BJT) 16A 250V 250W PNP
Data Sheet
Negotiable