(China (Mainland))
Product Summary
The MJ21193 is a Silicon Power Transistor. It utilizes Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Parametrics
MJ21193 absolute maximum ratings: (1)Collector-Emitter Voltage:250 Vdc; (2)Collector-Base Voltage:400 Vdc; (3)Emitter-Base Voltage:5 Vdc; (4)Collector-Emitter Voltage -1.5V:400 Vdc; (5)Collector Current:Continuous:16Adc, Peak:30Adc; (6)Base Current - Continuous:5 Adc; (7)Total Power Dissipation @ TC = 25℃:250W; (8)Derate Above 25℃:1.43W/℃; (9)Operating and Storage Junction Temperature Range:-65 to +200℃.
Features
MJ21193 features: (1)Total Harmonic Distortion Characterized; (2)High DC Current Gain - hFE = 25 Min @ IC = 8 Adc; (3)Excellent Gain Linearity; (4)High SOA: 2.5 A, 80 V, 1 Second.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJ21193G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W PNP |
Data Sheet |
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MJ21193 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 250V 250W PNP |
Data Sheet |
Negotiable |
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